Drived by critical application, wide bang-gap semiconductor application booms

When the semiconductor industry is gradually entering the Post-Moore-era, wide band-gap semiconductors are on the historical stage, which is considered an important area of "exchanging overtaking". It is expected that in 2024, the wide band-gap semiconductor materials represented by SiC and GaN will continue to be applied in scenarios such as communications, new energy vehicles, high -speed rail, satellite communications, aerospace and other scenarios, and will be used. The application market achieves rapidly.

The maximum application market for silicon carbide (SiC) devices is in new energy vehicles, and it is expected to open the tens of billions of markets. The ultimate performance of the silicon base is better than the silicon substrate, which can meet the application requirements under the conditions such as high temperature, high voltage, high frequency, high power. The current silicon carbide substrate has been used in radio frequency devices (such as 5G, national defense, etc.) and and and national defense, etc. Power device (such as new energy, etc.). And 2024 will be SIC's expansion of production. IDM manufacturers such as Wolfspeed, BOSCH, ROHM, INFINEON, and TOSHIBA have announced that it has accelerated its expansion. It is believed that SiC production in 2024 will increase by at least 3 times.

Nitride (GaN) Electric Electronics has been applied in a scale in the field of fast charging. Next, it needs to further improve the working voltage and reliability, continue to develop high power density, high -frequency and high integration directions, and further expand the field of application. Specifically, the use of consumer electronics, automobile applications, data centers, and industrial and electric vehicles will continue to increase, which will promote the GaN industry growth of more than US$ 6 billion.

The commercialization of oxidation(Ga₂O₃) is getting close, especially in the fields of electric vehicles, power grid systems, aerospace and other fields. Compared with the previous two, the preparation of Ga₂O₃ single crystal can be completed by the melting growth method similar to silicon single crystal, so it has a large cost reduction potential. At the same time, in recent years, the Schottky diodes and crystal pipes based on oxide materials have made breakthrough progress in terms of structural design and process. There are reasons to believe that the first batch of SCHOTTKY diode products will be launched in the market in 2024.